Alkoxysilane layers compatible with copper deposition for advanced semiconductor device applications

Langmuir

Volumn 26, Issue 11, 2010, Pages 8981-8987

  Rébiscoul, Diane ^a   Perrut, Vincent ^b   Morel, Thierry ^a   Jayet, Céline ^a   Cubitt, Robert ^c   Haumesser, Paul Henri ^a  

^a CEA GRENOBLE   (France)

^b 31 Degrees ^*  (France)

^c INSTITUT LAUE LANGEVIN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALKOXYSILANES; AMINOPROPYLTRIMETHOXYSILANE; CHEMICAL FUNCTIONS; COPPER DEPOSITION; CU DEPOSITION; CU FILMS; HEAD GROUPS; LOW DENSITY; MOCVD; NEUTRON REFLECTOMETRY; NUCLEATION AND GROWTH; ORGANIC LAYERS; POROUS DIELECTRIC MATERIAL; SILANE LAYERS; SUPERCRITICAL CO;

ATOMIC FORCE MICROSCOPY; COPPER; MORPHOLOGY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SWITCHES; SILANES; THICK FILMS;

DIELECTRIC MATERIALS;

EID: 77954546815     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la904771s     Document Type: Article

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