High density interconnect at 10μm pitch with mechanically keyed Cu/Sn-Cu and Cu-Cu bonding for 3-D integration

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2010, Pages 846-852

  Reed, Jason D ^a   Lueck, Matthew ^a   Gregory, Chris ^a   Huffman, Alan ^a   Lannon Jr , John M ^a   Temple, Dorota ^a  

^a RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D INTEGRATION; BEFORE AND AFTER; BONDING PROCESS; CHANNEL YIELD; CROSS SECTION; EDS ANALYSIS; ELECTRICAL YIELD; HIGH DENSITY INTERCONNECTS; INTERCONNECT DENSITIES; INTERMETALLIC COMPOUNDS; LARGE AREA ARRAYS; LOW RESISTANCE; SEM; SHEAR TESTS; STRESS TESTING; THERMO-COMPRESSION; UNDERFILLS;

INTERMETALLICS;

EID: 77955213590     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2010.5490704     Document Type: Conference Paper

References (7)

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7. J. Reed, M. Lueck, C. Gregory, A. Huffman, J. M. Lannon, Jr., and D. Temple, "Reliability and Ultra-Low Temperature Bonding of High Density Large Area Arrays for 3D Integration", International Interconnect Technology Conference, San Francisco, June 2010, in press.