Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

Journal of Physics D: Applied Physics

Volumn 45, Issue 26, 2012, Pages

  Kong, Xin ^a   Wei, Ke ^a   Liu, Guoguo ^a   Liu, Xinyu ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; BLOCKING EFFECT; CARRIER TUNNELLING; CURRENT-VOLTAGE RESPONSE; DIRECT LINKS; ELECTRON TRANSPORT; FORMATION MECHANISM; FREE DIFFUSION; LOW RESISTANCE; METAL ALLOYS; N VACANCY; ROUGH SURFACES; SCANNING TRANSMISSION ELECTRON MICROSCOPY; TI/AL/NI/AU; X-RAY SPECTRA;

ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; OHMIC CONTACTS; SURFACE MORPHOLOGY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC CONTACTORS;

EID: 84862552277     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/26/265101     Document Type: Article

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