Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors

Semiconductor Science and Technology

Volumn 21, Issue 2, 2006, Pages 175-179

  Chaturvedi, N ^a   Zeimer, U ^a   Wurfl J ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GALLIUM NITRIDE; INTERMETALLICS; METALLIZING; MORPHOLOGY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS;

AL-MO PHASE; LOW CONTACT RESISTANCE; OHMIC CONTACT METALLIZATION; TI/AL/TI/AU CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 30744458330     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/2/014     Document Type: Article

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