220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Shinohara, K ^a   Corrion, A ^a   Regan, D ^a   Milosavljevic, I ^a   Brown, D ^a   Burnham, S ^a   Willadsen, P J ^a   Butler, C ^a   Schmitz, A ^a   Wheeler, D ^a   Fung, A ^b   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; CHARGING TIME; DC CHARACTERISTICS; DELAY TIME ANALYSIS; DH-HEMTS; DOUBLE HETEROJUNCTIONS; GAN HEMTS; GATE LENGTH; HIGH SCALABILITIES; NEW TECHNOLOGIES; RE-GROWTH; RF PERFORMANCE; SMALL SIGNAL MODEL; TOTAL DELAY TIME; TRANSIT TIME; VERTICAL SCALING;

ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79951828920     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703448     Document Type: Conference Paper

References (4)

1. M. Micovic et al., IEDM Tech. Dig., pp. 807-810, 2004.
2. M. Higashiwaki, T. Mimura, and T. Matsui, Applied Physics Express, 1, 021103, pp. 1-3, 2008.
3. J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, IEEE Electron Device Lett., 31, 3, pp. 195-197, 2010.
4. K. Shinohara et al., DRC Tech. Dig., pp. 167-168, 2009.