Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 45-49, 2007, Pages

  Pei, Yi ^a   Chu, Rongming ^a   Fichtenbaum, Nicholas A ^a   Chen, Zhen ^a   Brown, David ^a   Shen, Likun ^a   Keller, Stacia ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Gallium nitride; High electron mobility transistor (HEMT); Power measurements; Recess; Slant gate

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; IONIZATION OF GASES; NITRIDES; SEMICONDUCTING GALLIUM; TRANSISTORS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BREAKDOWN VOLTAGES; DRAIN BIASSED; ELECTRIC-FIELD; GATE LEAKAGES; GATE PROCESSING; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); POWER DENSITIES; POWER MEASUREMENTS; RECESS; SLANT GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749096824     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L1087     Document Type: Article

References (12)

1. U. K. Mishra, P. Parikh, and Y.-F. Wu: Proc. IEEE 90 (2002) 1022.
2. I. Adesida, V. Kumar, F. Mohammed, L. Wang, A. Basu, D. H. Kim, and W. Lanford: IEDM Tech. Dig., 2006, p. 407.
3. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman: IEEE Electron Device Lett. 21 (2000) 268.
4. L. Shen, Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra: IEEE Int. Microwave Symp. Tech. Dig., 2007, p. 623.
5. N. Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. DenBaars, and U. K. Mishra: IEEE Electron Device Lett. 21 (2000) 421.
6. Y. F. Wu, M. Moore, A. Saxler, T, Wisleder, and P. Parikh: 64th Device Research Conf., 2006, p. 151.
7. R. Thompson, T. Prunty, V. Kaper, and J. R. Shealy: IEEE Trans. Electron Device. 51 (2004) 292.
8. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra: IEEE Electron Device Lett. 27 (2006) 713.
9. S. Heikman, S. Keller, D. S. Green, S. P. DenBaars, and U. K. Mishra: J. Appl. Phys. 94 (2003) 5321.
10. R. Chu, L. Shen, N. Fichtenbaum, S. Keller, A. Corrion, C. Poblenz, J. S. Speck, and U. K. Mishra: 65th Device Research Conf., 2007, p. 127.
11. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, and U. K. Mishra: Electron. Lett. 40 (2004) 73.
12. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara: IEEE Electron Device Lett. 24 (2003) 289.