Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN

Microelectronics Reliability

Volumn 51, Issue 8, 2011, Pages 1325-1329

  Perez Tomas A ^a   Placidi, M ^a   Fontser, A ^a   Gammon, P M ^b   Jennings, M R ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GAN-BASED DEVICES; IMPLANTED LAYERS; LOW RESISTIVITY; METAL COMBINATION; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; METAL-SEMICONDUCTOR CONTACTS; POSTIMPLANTATION ANNEALING; TEMPERATURE BEHAVIOR; TEMPERATURE RANGE;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; MODELS; OHMIC CONTACTS; SEMICONDUCTOR DEVICES; SHEET METAL; SHEET RESISTANCE; SILICON COMPOUNDS;

GALLIUM NITRIDE;

EID: 79959914998     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.03.023     Document Type: Article

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