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Volumn 87, Issue 6, 2005, Pages

The role of Al on Ohmic contact formation on n -type GaN and AlGaNGaN

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGANGAN; INTERFACE PINNING; METAL MULTILAYERS; OHMIC CONTACT FORMATION;

FERMI LEVEL; GALLIUM NITRIDE; METALLIZING; OHMIC CONTACTS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

ALUMINUM;

EID: 23944524853 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2008361 Document Type: Article

Times cited : (111)

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