AlGaN/GaN HEMTs - Operation in the K-band and above

IEEE Transactions on Microwave Theory and Techniques

Volumn 51, Issue 2 II, 2003, Pages 665-668

  Smorchkova, Ioulia P ^a   Wojtowicz, M ^a   Sandhu, Rajinder ^a   Tsai, R ^a   Barsky, M ^a   Namba, C ^a   Liu, P S ^a   Dia, R ^a   Truong, MinhDao ^a   Ko, D ^a   Wang, J ^b   Wang, H ^b   Khan, A ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b University of South Carolina   (United States)

Author keywords

GaN; High electron mobility transistor (HEMT); K band; Microwave noise; Microwave power

Indexed keywords

GALLIUM NITRIDE; MICROWAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

MICROWAVE NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 12244277387     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.807683     Document Type: Article

References (13)

1. L. F. Eastman. (2000, Sept.) High power, broadband, linear, solid state amplifier. Cornell Univ., Ithaca, NY. [Online]. Available: http://www.iiiv.cornell.edu/www/schaff/muri/reports/fy01q4/report.html.
2. M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, D. W. S. Wong, J. S. Moon, L. McCray, and C. Nguyen, "AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy," IEEE Trans. Electron Devices, vol. 48, pp. 591-596, Mar. 2001.
3. J. W. Palmour, S. T. Sheppard, R. P. Smith, S. T. Allen, W. L. Pribble, T. J. Smith, Z. Ring, J. J. Sumakeris, A. W. Saxler, and J. W. Milligan, "Wide bandgap semiconductor devices and MMIC's for RF power applications," in Int. Electron Devices Meeting Tech. Dig., Washington, DC, 2001, pp. 17.4.1-17.4.4.
4. N. X. Nguyen, M. Micovic, W. S. Wong, P. Hashimoto, P. Janke, D. Harvey, and C. Nguyen, "Robust low microwave noise GaN MODFET's with 0.6 Db noise figure at 10 Ghz," Electron. Lett., vol. 36, pp. 469-471, Mar. 2000.
5. T and low microwave noise," IEEE Trans. Electron Devices, vol. 48, pp. 581-585, Mar. 2001.
6. J. S. Moon, M. Micovic, P. Janke, P. Hashimoto, W. S. Wong, R. D. Widman, L. McCray, A. Kurdoghlian, and C. Nguyen, "GaN/AlGaN HEMT's operating at 20 Ghz with continuous-wave power density >6W/mm," Electron. Lett., vol. 37, pp. 528-530, Apr. 2001.
7. R. Lai, M. Barsky, R. Grundbacher, L. Tran, T. Block, T. P. Chin, V. Medvedev, E. Sabin, H. Rogers, P. H. Liu, Y. C. Chen, R. Tsai, and D. Streit, "0.1 μm InGaAs/InAlAs/InP HEMT production process for high performance and high volume MMW applications," in Proc. Int. GaAs Manufacturing Technology Conf., 1999.
8. R. Lai, M. Biedenbender, J. Lee, K. Tan, D. Streit, P. H. Liu, M. Hoppe, and B. Allen, "0.15 μm InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs," in GaAs IC Symp. Tech. Dig., 1995, pp. 105-108.
9. L. F. Eastman, V. Tylak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, "Undoped AlGaN/GaN HEMTs for microwave power amplification," IEEE Trans. Electron Devices, vol. 48, pp. 479-485, Mar. 2001.
10. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Wang, M. A. Khan, and I. Adesida, "AlGaN/GaN HEMTs on SiC with Ft of over 120 Ghz," Electron Device Lett., vol 23, pp. 455-457, Aug. 2002.
11. B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealey, and L. F. Eastman, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's," IEEE Electron Device Lett., vol. 21, pp. 268-270, June 2000.
12. Y. F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. K. Keller, and U. K. Mishra, "Very high power density AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, pp. 586-590, Mar. 2001.
13. S. Keller, Y. F. Wu, G. Parish, N. Ziang, J. J. Xu, B. K. Keller, S. P. DenBaars, and U. K. Mishra, "Gallium nitride based high power heterojunction field effect transistors: Process development and present status at UCSB," IEEE Trans. Electron Devices, vol. 48, pp. 552-559, Mar. 2001.