Resistivity and structural defects of reactively sputtered TiN and HfN films

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 246-249

  Ando, Y ^a   Sakamoto, I ^a   Suzuki, I ^a   Maruno, S ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron localization; HfN; Oxygen impurity; Reactive sputtering; Thin film; TiN

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; HAFNIUM COMPOUNDS; MAGNETIC VARIABLES MEASUREMENT; PRESSURE EFFECTS; SPUTTER DEPOSITION; THIN FILMS; TITANIUM NITRIDE;

FACE-CENTERED CUBIC (FCC) STRUCTURE; HAFNIUM NITRIDE; MAGNETOCONDUCTANCE; REACTIVE SPUTTERING;

CERAMIC COATINGS;

EID: 0032650293     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01636-8     Document Type: Article

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