GaP collector development for SiGe heterojunction bipolar transistor performance increase: A heterostructure growth study

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Skibitzki, O ^a   Hatami, F ^b   Yamamoto, Y ^a   Zaumseil, P ^a   Trampert, A ^c   Schubert, M A ^a   Tillack, B ^a,d   Masselink, W T ^b   Schroeder, T ^a,e  

^a IHP   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; DEFECT CHARACTERIZATION; DEFECT NUCLEATION; GROWTH CONDITIONS; HETEROBIPOLAR TRANSISTORS; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; SINGLE-CRYSTALLINE; THERMAL BUDGET; WIDE BAND GAP;

ATOMIC FORCE MICROSCOPY; COALESCENCE; DEFECTS; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 84861749382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701583     Document Type: Conference Paper

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