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Acta Materialia

Volumn 50, Issue 6, 2002, Pages 1275-1287

Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy

(5) Narayanan, V a Mahajan, S a Bachmann, K J b Woods, V c Dietz, N c

a Arizona State University (United States)

b North Carolina State University (United States)

c NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

Antiphase domains; Epitaxy; GaP; Islands; Transmission electron microscopy (TEM)

Indexed keywords

CHEMICAL BEAM EPITAXY; CHEMICAL BONDS; COALESCENCE; COMPUTER SIMULATION; CRYSTAL LATTICES; DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

ANTIPHASE BOUNDARIES (APB);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037006915 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/S1359-6454(01)00408-6 Document Type: Article

Times cited : (41)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.