In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)

Journal of Vacuum Science and Technology B

Volumn 28, Issue 4, 2010, Pages

  Döscher, Henning ^a   Kunert, Bernardette ^b   Beyer, Andreas ^b   Supplie, Oliver ^a   Volz, Kerstin ^b   Stolz, Wolfgang ^b   Hannappel, Thomas ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM PHOSPHIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SILICON COMPOUNDS;

ANISOTROPY SPECTRA; ANNEALING PROCEDURES; ANTIPHASE DOMAINS; ATOMIC-FORCE-MICROSCOPY; EX-SITU ATOMIC FORCE MICROSCOPY; HETEROEPITAXIAL; METAL-ORGANIC VAPOUR PHASE EPITAXY; POSTGROWTH ANNEALING; REFLECTANCE ANISOTROPY SPECTROSCOPY; SAMPLE SURFACE;

ANISOTROPY;

EID: 77957236641     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3466529     Document Type: Conference Paper

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