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Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

In situ reflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si(100)

(2) Döscher, Henning a Hannappel, Thomas a

a HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE; ANTIPHASE DOMAINS; ATOMIC ORDERS; DIFFERENCE SPECTROSCOPY; HETERO INTERFACES; HETEROEPITAXIAL; HETEROEPITAXIAL FILMS; HOMOEPITAXIAL; IN-SITU; LINEAR REDUCTION; PHOTON ENERGY; SI(1 0 0); SPECTRAL POSITION; SPECTROSCOPIC SIGNATURES;

ANISOTROPY; GALLIUM ALLOYS; PHOSPHORUS; PROBES; REFLECTION; SURFACE RECONSTRUCTION;

ATOMIC SPECTROSCOPY;

EID: 77954191145 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3357391 Document Type: Article

Times cited : (73)

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