About the strain state of different metal oxide layers epitaxially grown on Si(111)

Journal of Physics D: Applied Physics

Volumn 44, Issue 5, 2011, Pages

  Zaumseil, P ^a   Schroeder, T ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICATES; ANNEALING PROCESS; BROAD SPECTRUM; BUFFER MATERIALS; COEFFICIENT OF THERMAL EXPANSION; CUBIC PHASE; EPITAXIALLY GROWN; HEXAGONAL PHASE; HIGH TEMPERATURE MEASUREMENT; INTERFACE LAYER; LAYER STACKS; LAYER THICKNESS; METAL OXIDE LAYERS; METAL OXIDES; OXIDE LATTICES; PREPARATION CONDITIONS; ROOM TEMPERATURE; SI (1 1 1); STRAIN COMPONENTS; STRAIN STATE; THIN-FILM STRUCTURE; X RAY MEASUREMENTS; X-RAY DIFFRACTION TECHNIQUES;

EPITAXIAL GROWTH; GROWTH TEMPERATURE; LEAD OXIDE; METALLIC COMPOUNDS; SCANDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICATES; TEMPERATURE MEASUREMENT; THERMAL EXPANSION; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 79251561544     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/5/055403     Document Type: Article

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