Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 1, 2002, Pages 1-4

  Hong, Chao Chi ^a   Chen, Wei Ren ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Composed capacitor; Local thinning; Metal oxide semiconductor (MOS); Oxide thickness nonuniformity; Tunneling current

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; ETCHING; SILICON WAFERS;

TUNNELING CURRENT;

MOS CAPACITORS;

EID: 0036309905     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.1     Document Type: Article

References (12)