First principles study of the oxygen vacancy formation and the induced defect states in hafnium silicates

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Chen, Tsung Ju ^a   Kuo, Chin Lung ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; BAND-GAP REGION; COORDINATION STRUCTURES; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; FIRST-PRINCIPLES STUDY; FLAT-BAND VOLTAGE SHIFT; FORMATION ENERGIES; HAFNIUM SILICATES; HYBRID DENSITY FUNCTIONAL; INDUCED DEFECTS; LOCAL STRUCTURE; NEGATIVE-U; NEUTRAL STATE; POSITIVE CHARGES; STRUCTURE MODELS; TRANSITION LEVEL; VACANCY FORMATION; VACANCY SITES; VOLTAGE INSTABILITY;

AMORPHOUS SILICON; CALCULATIONS; CRYSTALLINE MATERIALS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI LEVEL; HAFNIUM; HAFNIUM OXIDES; SILICON; VACANCIES;

SILICATES;

EID: 84861722330     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3702578     Document Type: Conference Paper

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