Ab initio modeling of electronic and optical properties of hafnium silicates

Computational Materials Science

Volumn 44, Issue 3, 2009, Pages 929-932

  Feng, Li Ping ^a   Liu, Zheng Tang ^a   Xu, Bing ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Ab initio modeling; Electronic structure; Extinction coefficient; Hafnium silicates; Refractive index

Indexed keywords

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HAFNIUM; LIGHT REFRACTION; OPTICAL CONSTANTS; OPTICAL MATERIALS; OPTICAL PROPERTIES; ORGANIC POLYMERS; REFRACTIVE INDEX; REFRACTOMETERS; SILICATES;

AB INITIO; AB INITIO CALCULATIONS; AB INITIO MODELING; DENSITIES OF STATES; ELECTRONIC BAND GAPS; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; EXPERIMENTAL OBSERVATIONS; EXTINCTION COEFFICIENT; EXTINCTION COEFFICIENTS; HAFNIUM SILICATES; LOCAL DENSITIES; SILICON CONTENTS;

SILICON;

EID: 57249094342     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2008.06.025     Document Type: Article

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