Formation of dual-phase HfO 2-Hf xSi 1-xO 2 dielectric and its application in memory devices

Journal of Applied Physics

Volumn 98, Issue 1, 2005, Pages

  Wang, Ying Qian ^a   Chen, Jing Hao ^a   Yoo, Won Jong ^a   Yeo, Yee Chia ^a   Chin, Albert ^b   Du, An Yan ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; DRY OXIDATION; ELECTRON-CAPTURE EFFICIENCY; MEMORY STRUCTURE;

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; ELECTRIC FIELD EFFECTS; HAFNIUM COMPOUNDS; OXIDATION; PHASE SEPARATION; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 22944467509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1954870     Document Type: Article

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