On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of Applied Physics

Volumn 110, Issue 12, 2011, Pages

  Thomas, S M ^a   Prest, M J ^a   Whall, T E ^a   Leadley, D R ^a   Toniutti, P ^b   Conzatti, F ^b   Esseni, D ^b   Donetti, L ^c   Gmiz, F ^c   Lander, R J P ^d   Vellianitis, G ^d   Hellstrom P E ^e   Stling, M ^e  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF UDINE   (Italy)

^c UNIVERSITY OF GRANADA   (Spain)

^d NXP SEMICONDUCTORS   (Netherlands)

^e ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; EFFECTIVE MOBILITIES; FINFETS; GATE STACKS; IONIZED IMPURITIES; LOCAL ROUGHNESS; MONTE CARLO SIMULATION; MOSFETS; POLYCRYSTALLINE SILICON GATES; REMOTE COULOMB SCATTERINGS;

COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRONS; HAFNIUM; LOGIC GATES; MONTE CARLO METHODS; MOSFET DEVICES; POLYSILICON; SCATTERING; SEMICONDUCTING SILICON; SILICATES; SILICON OXIDES;

HOLE MOBILITY;

EID: 84855334546     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669490     Document Type: Article

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