Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N + implanted silicon

Applied Surface Science

Volumn 258, Issue 18, 2012, Pages 7195-7201

  Gartner, M ^a   Szekeres, A ^b   Alexandrova, S ^c   Osiceanu, P ^a   Anastasescu, M ^a   Stoica, M ^a   Marin, A ^a   Vlaikova, E ^b   Halova, E ^c  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^c TECHNICAL UNIVERSITY OF SOFIA   (Bulgaria)

Author keywords

Silicon oxynitride; VIS and IR ellipsometry; XPS measurements

Indexed keywords

BOND STRENGTH (CHEMICAL); ELLIPSOMETRY; ION IMPLANTATION; NITRIDES; SILICA; SILICON NITRIDE; SILICON OXIDES;

COMPLEX DIELECTRIC FUNCTIONS; HIGH TEMPERATURE; INFRARED ELLIPSOMETRY; ION IMPLANTED SI; MID-INFRARED SPECTRAL RANGE; PLASMA IMMERSION; SILICON OXYNITRIDES; XPS MEASUREMENTS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84861096781     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.04.033     Document Type: Article

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