Light nitrogen implant for preparing thin-gate oxides

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 105-107

  Liu, C T ^a   Ma, Y ^a   Becerro, J ^a   Nakahara, S ^a   Eaglesham, D J ^a   Hillenius, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELLIPSOMETRY; ION IMPLANTATION; MOSFET DEVICES; NITROGEN; OXIDATION; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VLSI CIRCUITS;

ELLIPSOMETRY MEASUREMENT; THIN GATE OXIDES; TRANSMISSION ELECTRON MICROSCOPY MEASUREMENT;

OXIDES;

EID: 0031103926     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556095     Document Type: Article

References (6)

1. 4-layers produced by ion implantation," Appl. Phys., vol. 22, p. 393, 1980.
2. 2 oxides by direct nitrogen implantation into silicon," J. Electrochem. Soc., vol. 142, no. 8, p. L132, 1995.
3. A. Furukawa, Y. Abe, S. Shimizu, T. Kroi, Y. Tokuda, and M. Inuishi, "Channel engineering in sub-quarter-micron MOSFET's using nitrogen implantation for low-voltage operation," Dig. 1996 Symp. VLSI Technology, p. 62.
4. N. Gonon, A. Gagnaire, D. Barbier, and A. Glachant, "Growth and structure of rapid thermal silicon oxides and nitroxides studied by spectroellipsometry and auger electron spectroscopy," J. Appl. Phys., vol. 76, no. 9, p. 5242, 1994.
5. S. J. Fang, W. Chen, T. Yamanaka, and C. R. Helms, "Comparison of Si surface roughness measured by atomic force microscopy and ellipsometry," Appl. Phys. Lett., vol. 68, no. 20, p. 2837, 1996.
6. I. C. Chen, S, Holland, and C. Hu, "Oxide breakdown dependence on thickness and hole current-enhanced reliability of ultra thin oxides," in IEDM Tech. Dig., 1986, p. 660.