IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Liu, Xianming ^a,b   Li, Bincheng ^a  

^a INSTITUTE OF OPTICS AND ELECTRONICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SILICON WAFERS; CONCENTRATION PROFILES; HEAVILY DOPED; HIGH DOSE; HIGH DOSE ION-IMPLANTED; HIGH TEMPERATURE; IMPLANTATION DOSE; IMPURITY CONCENTRATION; INFRARED SPECTROSCOPIC ELLIPSOMETRY; IONIZATION PROBABILITIES; OPTICAL MODELS; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY; WAVELENGTH RANGES;

BIOACTIVITY; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); IMPURITIES; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

SILICON WAFERS;

EID: 67649793718     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3060996     Document Type: Article

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