Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

Microelectronics Journal

Volumn 37, Issue 1, 2006, Pages 64-70

  Szekeres, A ^a   Nikolova, T ^a   Simeonov, S ^a   Gushterov, A ^a   Hamelmann, F ^b   Heinzmann, U ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b BIELEFELD UNIVERSITY   (Germany)

Author keywords

Electrical properties; IR spectroscopy; Plasma assisted CVD; Silicon oxynitride; Specral ellipsometry

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC PROPERTIES; INFRARED SPECTROSCOPY; MOS DEVICES; PLASMA DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

SI SUBSTRATE; SILICON OXYNITRIDE; SPECTRAL ELLIPSOMETRY;

SILICON NITRIDE;

EID: 28044458141     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.06.013     Document Type: Article

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