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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 84-89

Comparative study of ion implantation caused damage depth profiles in polycrystalline and single crystalline silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry

(6) Petrik, P a Lohner, T a Fried, M a Khanh N Q a Polgar O a Gyulai, J a

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

Ion implantation; Polysilicon; Rutherford backscattering spectrometry; Spectroscopic ellipsometry

Indexed keywords

ELLIPSOMETRY; POLYCRYSTALLINE MATERIALS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

POLYCRYSTALLINE SILICON; SINGLE CRYSTALLINE SILICON; SPECTROSCOPIC ELLIPSOMETRY;

ION IMPLANTATION;

EID: 0032757470 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00566-7 Document Type: Article

Times cited : (14)

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