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Volumn 406, Issue 2, 2011, Pages 211-215
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FTIR and spectroscopic ellipsometry investigations of the electron beam evaporated silicon oxynitride thin films
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Author keywords
FTIR; Optical constants; Silicon oxynitride; Spectroscopic ellipsometry
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Indexed keywords
ABSORPTION BAND;
ABSORPTION COEFFICIENTS;
BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION;
CAUCHY MODEL;
ELLIPSOMETRIC SPECTRA;
EVAPORATED SILICON;
EXTINCTION COEFFICIENTS;
FTIR;
INTERFACE LAYER;
SILICON OXYNITRIDE;
SPECTROSCOPIC ELLIPSOMETERS;
SURFACE LAYERS;
THREE-LAYER;
URBACH ENERGY;
ABSORPTION;
COMPUTER SIMULATION;
ELECTRON BEAMS;
LIGHT REFRACTION;
OPTICAL CONSTANTS;
REFRACTIVE INDEX;
REFRACTOMETERS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON NITRIDE;
SPECTROSCOPIC ELLIPSOMETRY;
THIN FILMS;
SILICON OXIDES;
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EID: 78649522119
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2010.10.045 Document Type: Article |
Times cited : (7)
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References (33)
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