Effect of O 2, Ar/H 2 and CF 4 plasma treatments on the structural and dielectric properties of parylene-C thin films

Journal of Physics D: Applied Physics

Volumn 45, Issue 21, 2012, Pages

  Kahouli, A ^a,b   Sylvestre, A ^a   Laithier, J F ^c   Pairis, S ^d   Garden, J L ^d   Andre E ^d   Jomni, F ^b   Yangui, B ^b  

^a LABORATOIRE D ELECTROTECHNIQUE DE GRENOBLE   (France)

^b UNIVERSITY OF TUNIS EL MANAR   (Tunisia)

^c Comelec SA ^*  (Switzerland)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE SITE; CARBON DEPLETION; DIELECTRIC CHARACTERISTICS; ENERGY DISPERSIVE X-RAY; FLUORINE ATOMS; FLUORINE PLASMA; FOURIER; INDUSTRIAL FREQUENCY; MOLECULAR MOTIONS; OXYGEN CONTENT; OXYGEN PLASMAS; PARYLENE C; PLASMA EXPOSURE; PLASMA TREATMENT; POLARIZABILITIES; SPECTROSCOPY MEASUREMENTS; STRUCTURAL MODIFICATIONS; TIME CONSTANTS;

DIELECTRIC MATERIALS; FLUORINE; FUNCTIONAL GROUPS; HYDROGEN; MOLECULAR OXYGEN; PLASMA APPLICATIONS; PLASMAS; THIN FILMS;

DIELECTRIC PROPERTIES;

EID: 84861049698     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/21/215306     Document Type: Article

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