Investigation of plasma-oxidized aluminium as a gate dielectric for AlGaN/GaN MISHFETs

Semiconductor Science and Technology

Volumn 27, Issue 6, 2012, Pages

  Hahn, Herwig ^a   Alam, Assadullah ^b   Heuken, Michael ^a,b   Kalisch, Holger ^a   Vescan, Andrei ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; DIELECTRIC DEPOSITION; GATE CONTACT; GATE REGION; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HIGH-QUALITY INTERFACE; INDUCTIVELY-COUPLED; METAL-INSULATOR-SEMICONDUCTORS; OXYGEN PLASMAS; SUBTHRESHOLD SWING;

ALUMINUM; ELECTROMAGNETIC INDUCTION; GALLIUM NITRIDE; GATE DIELECTRICS; LEAKAGE CURRENTS; MIS DEVICES;

ELECTRIC PROPERTIES;

EID: 84860724518     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/6/062001     Document Type: Article

References (26)

1. Mishra U K, Likun S, Kazior T E and Wu Y F 2008 Proc. IEEE 96 287305
2. Ikeda N, Niiyama Y, Kambayashi H, Sato Y, Nomura T, Kato S and Yoshida S 2010 Proc. IEEE 98 115161
3. Oka T and Nozawa T 2008 IEEE Electron Device Lett. 29 66870
4. Kanamura M, Ohki T, Kikkawa T, Imanishi K, Imada T, Yamada A and Hara N 2010 IEEE Electron Device Lett. 31 18991
5. Eickelkamp M, Fahle D, Lindner J, Heuken M, Lautensack C, Kalisch H, Jansen R H and Vescan A 2010 Phys. Status Solidi a 207 13424
6. S Abermann S, Pozzovivo G, Kuzmik J, Strasser G, Pogany D, Carlin J-F, Grandjean N and Bertagnolli E 2007 Semicond. Sci. Technol. 22 1272 (Pubitemid 350175512)
7. Eickelkamp M, Hanna M, Brast M, Ketteniss N, Kalisch H, Jansen R H and Vescan A 2010 Proc. 34th WOCSDICE pp 234
8. Yagi S, Shimizu M, Inada M, Yamamoto Y, Piao G, Okumura H, Yano Y, Akutsu N and Ohashi H 2006 Solid-State Electron. 50 105761 (Pubitemid 44015829)
9. Hashizume T, Ootomo S, Inagaki T and Hasegawa H 2003 J. Vac. Sci. Technol. B 21 182838
10. Saadat O I and Palacios T 2011 Proc. European Solid-State Device Res. Conf. pp 28790 http://ieeexplore.org/xpls/abs-all.jsp?arnumber=6044178
11. Gregušová D, Stoklas R, Cico K, Lalinsk T and Kordoš P 2007 Semicond. Sci. Technol. 22 947 (Pubitemid 47160536)
12. Pozzovivo G et al 2008 Phys. Status Solidi c 5 19568
13. Maeda N, Wang C, Enoki T, Makimoto T and Tawara T 2005 Appl. Phys. Lett. 87 073504 (Pubitemid 41230678)
14. Taking S et al 2010 Electron. Lett. 46 3012
15. Ootomo S, Hashizume T and Hasegawa H 2003 Phys. Status Solidi c 0 904
16. Selvaraj S L and Egawa T 2009 J. Electrochem. Soc. 156 H6903
17. apajna M, Čičo K, Kuzmík J, Pogany D, Pozzovivo G, Strasser G, Carlin J F, Grandjean N and Fröhlich K 2009 Semicond. Sci. Technol. 24 035008
18. Kim K W, Jung S D, Kim D S, Kang H S, Im K S, Oh J J, Ha J B, Shin J K and Lee J H 2011 IEEE Electron Device Lett. 32 13768
19. Houssa M, Tuominen M, Naili M, Afanas'ev V, Stesmans A, Haukka S and Heyns M M 2000 J. Appl. Phys. 87 861520
20. Southwick R G, Reed J, Buu C, Butler R, Bersuker G and Knowlton W B 2010 IEEE Trans. Device Mater. Reliab. 10 2017
21. Hahn H, Lükens G, Ketteniss N, Kalisch H and Vescan A 2011 Appl. Phys. Express 4 114102
22. Sugiura S, Kishimoto S, Mizutani T, Kuroda M, Ueda T and Tanaka T 2008 Phys. Status Solidi c 5 19235
23. Alexewicz A, Ostermaier C, Henkel C, Bethge O, Carlin J F, Gonschorek M, Grandjean N, Pogany D, Bertagnolli E and Strasser G 2011 Proc. 35th WOCSDICE pp 1512
24. Sahoo D K, Lal R K, Kim H, Tilak V and Eastman L F 2003 IEEE Trans. Electron Devices 50 116370
25. Corrion A L, Chen M, Chu R, Burnham S D, Khalil S, Zehnder D, Hughes B and Boutros K 2011 69th Annual Device Res. Conf. pp 2134
26. Binari S C, Rowland L B, Kelner G, Kruppa W, Dietrich H B, Doverspike K and Gaskill D K 1994 Proc. 21st Int. Symp. on Compound Semiconductors p 459