Oxygen plasma treated aluminum as a gate dielectric for AlGaN/GaN high electron mobility transistors

Journal of the Electrochemical Society

Volumn 156, Issue 9, 2009, Pages

  Selvaraj, S Lawrence ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; GATE BIAS; GATE LEAKAGES; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; OUT-DIFFUSION; OXIDE LAYER; OXYGEN PLASMAS; SCHOTTKY CONTACTS; SCHOTTKY GATE; SILICON SUBSTRATES; X RAY PHOTOELECTRON SPECTRA;

ALUMINA; ALUMINUM; DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); MOS CAPACITORS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PLASMAS; SEMICONDUCTING SILICON; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68049147159     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3156653     Document Type: Article

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