Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O 3/InAlN/GaN heterostructures

Semiconductor Science and Technology

Volumn 24, Issue 3, 2009, Pages

  Tapajna M ^a   Cico K ^a   Kuzmik J ^a,b   Pogany, D ^b   Pozzovivo, G ^b   Strasser, G ^b   Carlin, J F ^c   Grandjean, N ^c   Frohlich K ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGES; CAPACITANCE-VOLTAGE CHARACTERISTICS; CAPACITANCE-VOLTAGE CURVES; DEEP-LEVEL TRANSIENT SPECTROSCOPIES; ELEVATED TEMPERATURES; FUNCTION OF TIME; HETEROSTRUCTURE; HETEROSTRUCTURES; HOLE EMISSIONS; INTERFACE STATES DENSITIES; METAL-OXIDE SEMICONDUCTORS; NEGATIVE BIAS; OXIDE/SEMICONDUCTOR INTERFACES; POSITIVE VOLTAGES; TEMPERATURE RANGES; THERMALLY INDUCED; THRESHOLD VOLTAGE SHIFTS; TIME CHARACTERISTICS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; THRESHOLD VOLTAGE;

CAPACITANCE;

EID: 64249160990     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/3/035008     Document Type: Article

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