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Volumn , Issue , 2011, Pages 287-290
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Low temperature gate dielectric deposition for recessed AlGaN/GaN MIS-HEMTs
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAN/GAN;
DIELECTRIC DEPOSITION;
ENABLING TECHNOLOGIES;
GATE INSULATOR;
GATE LEAKAGES;
LOW TEMPERATURES;
LOW-TEMPERATURE GATE DIELECTRIC;
RECESSED GATE;
SCHOTTKY GATE;
SUBTHRESHOLD SLOPE;
TEMPERATURE CONDITIONS;
ATOMIC LAYER DEPOSITION;
DIELECTRIC MATERIALS;
GALLIUM NITRIDE;
HAFNIUM OXIDES;
HIGH ELECTRON MOBILITY TRANSISTORS;
PHOTORESISTS;
GATE DIELECTRICS;
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EID: 82955201891
PISSN: 19308876
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.2011.6044178 Document Type: Conference Paper |
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Times cited : (9)
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References (8)
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