Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMT with Al2O3 gate insulation grown by CVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1956-1958

  Pozzovivo, G ^a   Kuzmik, J ^a,b   Golka, S ^a   Cico K ^b   Frohlich K ^b   Carlin, J F ^c   Gonschorek, M ^c   Grandjean, N ^c   Schrenk, W ^a   Strasser, G ^a   Pogany, D ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DEPLETION; GATE INSULATION; MOS STRUCTURE; ORDERS OF MAGNITUDE; PERFORMANCE IMPROVEMENTS; SCHOTTKY;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; INSULATION; MOS DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951213101     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778528     Document Type: Conference Paper

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