First-principles study on intrinsic point defects in rhombohedral LaAlO 3 and their effects on electrical properties

Japanese Journal of Applied Physics

Volumn 51, Issue 4 PART 1, 2012, Pages

  Xie, Xiaojun ^a,b   Cheng, Yonghong ^a   Xiao, Bing ^c   Ohki, Yoshimichi ^b  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b WASEDA UNIVERSITY   (Japan)

^c Tulane University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; CONCENTRATION CHANGE; EQUILIBRIUM CONDITIONS; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; INTRINSIC POINT DEFECTS; METAL ELEMENTS; OXIDE LAYER; OXYGEN PARTIAL PRESSURE; OXYGEN-RICH CONDITIONS; PLANE WAVE; TUNNELLING CURRENT; VALENCE-BAND MAXIMUMS;

CALCULATIONS; LANTHANUM ALLOYS; OXYGEN; PARTIAL PRESSURE; POINT DEFECTS;

ELECTRIC PROPERTIES;

EID: 84860476296     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.041103     Document Type: Article

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