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Applied Physics A: Materials Science and Processing

Volumn 83, Issue 2, 2006, Pages 289-293

Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si

(9) Edon, V a Hugon, M C a Agius, B a Miotti, L b Radtke, C b Tatsch, F b Ganem, J J c Trimaille, I c Baumvol, I J R d

a UNIVERSITÉ PARIS SUD (France)

b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

c INSTITUT DES NANOSCIENCES DE PARIS (France)

d UNIVERSITY OF CAXIAS DO SUL (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; NITROGEN; SILICON; SPUTTER DEPOSITION; THIN FILMS;

METAL-OXIDE-SEMICONDUCTOR; OXYGEN VACANCIES; POST-DEPOSITION ANNEALING; SPUTTER DEPOSITION PARAMETERS;

LANTHANUM COMPOUNDS;

EID: 33645309105 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3484-5 Document Type: Article

Times cited : (12)

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