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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 8, 2005, Pages 1775-1779

Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

(6) Liu, J M a,b Shi, G H a,b Yu, L C a,b Li, T L a,b Liu, Z G a,b Dai, J Y c

a NANJING UNIVERSITY (China)

b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

c HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS FILMS; CRYSTALLIZATION; LANTHANUM COMPOUNDS; LASER PULSES; LEAKAGE CURRENTS; PERMITTIVITY; PULSED LASER DEPOSITION; SILICON WAFERS; THIN FILMS; YTTRIUM COMPOUNDS;

CHARGE DENSITY; CRYSTALLIZATION RESISTING TEMPERATURE; GATE DIELECTRIC APPLICATIONS; LASER PULSE ENERGY;

DIELECTRIC FILMS;

EID: 17444372798 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2481-1 Document Type: Article

Times cited : (3)

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