Low-temperature, solution-processed zinc tin oxide thin-film transistors fabricated by thermal annealing and microwave irradiation

Japanese Journal of Applied Physics

Volumn 51, Issue 4 PART 1, 2012, Pages

  Yoo, Young Bum ^a   Park, Jee Ho ^a   Lee, Se Jong ^b   Song, Kie Moon ^c   Baik, Hong Koo ^a  

^a Yonsei University   (South Korea)

^b Kyungsung University   (South Korea)

^c Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DEVICE CHARACTERISTICS; HOT PLATES; LOW TEMPERATURES; MICROWAVE-ASSISTED; ON/OFF CURRENT RATIO; SOL GEL SOLUTIONS; SOLUTION-PROCESSED; THERMAL-ANNEALING; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS); TRANSPARENT ELECTRONICS; ZINC TIN OXIDE; ZINC-TIN-OXIDE (ZTO);

FLEXIBLE ELECTRONICS; PHOTOELECTRONS; SOL-GELS; TEMPERATURE; THIN FILM TRANSISTORS; TIN; TIN OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

ANNEALING;

EID: 84860461648     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.040201     Document Type: Article

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