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Volumn 44, Issue 4 A, 2005, Pages 1919-1922

Fabrication of zinc oxide transparent thin-film transistor with ZrO 2 insulating layer by sol-gel method

Author keywords

Sol gel method; Transparent thin film transistor; ZnO active layer; ZrO2 insulating layer

Indexed keywords

ADDITIVES; CURRENT DENSITY; ELECTRODES; HEAT RESISTANCE; HYDROLYSIS; SOL-GELS; SURFACE ROUGHNESS; ZINC OXIDE;

SOL-GEL METHOD; TRANSPARENT THIN-FILM TRANSISTORS; ZNO ACTIVE LAYERS; ZRO2 INSULATING LAYERS;

THIN FILM TRANSISTORS;

EID: 21244505426 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.1919 Document Type: Article

Times cited : (32)

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