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Volumn 48, Issue 12, 2009, Pages

Improvement in electrical characteristics of low-pressure chemical-vapor-deposited SiNx dielectric layer on GaN substrate by ammonium sulfide treatment

(3) Lee, Ming Kwei a Ho, Chen Lin a Lee, Cheng Yuan a

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM SULFIDE; DIELECTRIC LAYER; EFFECTIVE OXIDE CHARGE; ELECTRICAL CHARACTERISTIC; FILM QUALITY; GAN SUBSTRATE;

AMMONIUM COMPOUNDS; ELECTRIC FIELDS; GALLIUM NITRIDE; SILICON NITRIDE; VAPORS;

GALLIUM ALLOYS;

EID: 75149170451 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.120202 Document Type: Article

Times cited : (6)

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