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Volumn 45, Issue 19, 2012, Pages
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Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND FILLING EFFECTS;
BAND GAP RENORMALIZATION;
BIAXIAL STRAINS;
CHEMICAL ETCHING;
ELECTRON CONCENTRATION;
HIGH-RESOLUTION X-RAY DIFFRACTION;
HRXRD;
INN THIN FILMS;
INTER-BAND TRANSITION;
METALORGANIC CHEMICAL VAPOUR DEPOSITION;
MG-DOPING;
PHONON FREQUENCIES;
PL SPECTRA;
PLASMONIC;
STRONG CORRELATION;
STRUCTURAL AND OPTICAL PROPERTIES;
ZN DOPING;
ETCHING;
GRAIN BOUNDARIES;
INDIUM;
OPTICAL PROPERTIES;
SEMICONDUCTOR QUANTUM WELLS;
THIN FILMS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
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EID: 84860385095
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/45/19/195102 Document Type: Article |
Times cited : (12)
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References (35)
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