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Volumn 45, Issue 19, 2012, Pages

Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; BAND GAP RENORMALIZATION; BIAXIAL STRAINS; CHEMICAL ETCHING; ELECTRON CONCENTRATION; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; INN THIN FILMS; INTER-BAND TRANSITION; METALORGANIC CHEMICAL VAPOUR DEPOSITION; MG-DOPING; PHONON FREQUENCIES; PL SPECTRA; PLASMONIC; STRONG CORRELATION; STRUCTURAL AND OPTICAL PROPERTIES; ZN DOPING;

EID: 84860385095     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/19/195102     Document Type: Article
Times cited : (12)

References (35)
  • 23
    • 84860363855 scopus 로고    scopus 로고
    • Taewoong Kim 2006 Indium nitride growth by metal-organic vapor phase epitaxy Thesis University of Florida
    • (2006) Thesis
    • Kim, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.