GaN/AlGaN ultraviolet/infrared dual-band detector

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Ariyawansa, G ^a   Rinzan, M B M ^a   Alevli, M ^a   Strassburg, M ^a   Dietz, N ^a   Perera, A G U ^a   Matsik, S G ^b   Asghar, A ^c   Ferguson, I T ^c   Luo, H ^d   Bezinger, A ^d   Liu, H C ^d  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NDP Optronics   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL-BAND DETECTOR; FREE CARRIER ABSORPTION MODEL; INTRABAND TRANSITIONS;

ABSORPTION; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; MILITARY APPLICATIONS; OPTOELECTRONIC DEVICES; ULTRAVIOLET RADIATION;

DETECTORS;

EID: 33748251273     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345226     Document Type: Article

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