Structural and optical properties of near-surface GainNAs/GaAs quantum wells at emission wavelength of 1.3 μm

Applied Physics Letters

Volumn 82, Issue 15, 2003, Pages 2428-2430

  Liu, H F ^a   Peng, C S ^a   Pavelescu, E M ^a   Karirinne, S ^a   Jouhti, T ^a   Valden, M ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; HIGH TEMPERATURE PROPERTIES; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE PROPERTIES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

HYBRIDIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0038326670     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1567453     Document Type: Article

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