MOCVD growth of high-quality InN films and Raman characterization of residual stress effects

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 1, 2001, Pages 1-4

  Kurimoto, E ^a   Harima, H ^a   Hashimoto, A ^b   Yamamoto, A ^b  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035541089     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<1::AID-PSSB1>3.0.CO;2-U     Document Type: Article

References (7)

1. V. YU. DAVYDOV, V. V. EMTSEV, I. N. GONCHARUK, A. N. SMIRNOV, V. D. PETRIKOV, V. V. MAMUTIN, V. A. VEKSHIN, S. V. IRANNOV, M. B. SMIMOV, and T. INUSHIMA, Appl. Phys. Lett. 75, 3297 (1999).
2. A. YAMAMOTO, T. SHIN-YA, T. SUGIURA, and A. HASHIMOTO, J. Cryst. Growth 189/190, 461 (1998).
3. M. ADACHI, Y. MURAKAMI, A. HASHIMOTO, and A. YAMAMOTO, Proc. Internat. Workshop on Nitride Semiconductors, IPAP Conf. Ser. 1, 339 (2000).
4. M. ADACHI, A. SEKI, A. HASHIMOTO, and A. YAMAMOTO, Proc. Internat. Workshop on Nitride Semiconductors, IPAP Conf. Ser. 1, 347 (2000).
5. F. DEMANGEOT, J. FRANDON, M. A. RENUCCI, O. BRIOT, B. GIL, and R. L. AULOMBARD, Solid State Commun. 100, 207 (1996).
6. P. PERLIN, C. J. CARILLON, J. P. ITIE, A. S. MIGUEL, I. GRZEGORY, and A. POLIAN, Phys. Rev. B 45, 83 (1992).
7. H. MORKOÇ, S. STRITE, G. B. GAO, M. E. LIN, B. SVERDLOV, and M. BURNS, J. Appl. Phys. 76, 1363 (1994).