The effects of cap layers on electrical properties of indium nitride films

Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

  Liu, Wei ^a   Tan, Rayson Jen Ngee ^a   Soh, Chew Beng ^a   Chua, Soo Jin ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; ALN; CAP LAYERS; ELECTRICAL PROPERTY; ELECTRON DENSITIES; INDIUM NITRIDE; INDIUM NITRIDE FILMS; N-TYPE DOPING; SURFACE ACCUMULATION;

ELECTRIC PROPERTIES; ELECTRON GAS; GALLIUM NITRIDE; INDIUM; PHASE INTERFACES; SILICON NITRIDE; TWO DIMENSIONAL; ZINC;

TWO DIMENSIONAL ELECTRON GAS;

EID: 77955732857     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3475400     Document Type: Article

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