In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-4 × 6 surface

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1101-1104

  Chang, Y H ^a   Huang, M L ^a   Chang, P ^a   Shen, J Y ^a   Chen, B R ^a   Hsu, C L ^a   Pi, T W ^b   Hong, M ^a   Kwo, J ^a,c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Atomic layer deposition; GaAs; Molecular beam epitaxy; Synchrotron radiation photoemission

Indexed keywords

ATOMIC LAYER DEPOSITED; CLEAN SURFACES; CORE-LEVEL SPECTRA; FIRST CYCLE; GAAS; GAAS SURFACES; IN-SITU; INTERFACIAL CHEMICALS; OXIDIZED STATE; REACTION SITES; SCANNING TUNNELING MICROSCOPY (STM); STM IMAGES; SYNCHROTRON-RADIATION PHOTOEMISSION;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL BEAM EPITAXY; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SYNCHROTRON RADIATION; SYNCHROTRONS;

SURFACE REACTIONS;

EID: 79958073781     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.064     Document Type: Conference Paper

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