Electrical characterization of the MOS (Metal-oxide-semiconductor) system: High mobility substrates

ECS Transactions

Volumn 34, Issue 1, 2011, Pages 1065-1070

  Lin, Dennis ^a   Brammertz, Guy ^a   Sioncke, Sonja ^a   Nyns, Laura ^a   Alian, Alireza ^a   Wang, Wei E ^a   Heyns, Marc ^a   Caymax, Matty ^a   Hoffmann, Thomas ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE PERFORMANCE; CAPACITANCE VOLTAGE; ELECTRICAL CHARACTERIZATION; HIGH MOBILITY; MATERIAL SYSTEMS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE;

DIELECTRIC DEVICES; GERMANIUM; LEAD OXIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; VANADIUM;

MOS DEVICES;

EID: 79959670127     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3567716     Document Type: Conference Paper

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