Revolutionary nanoelectronic devices and processes for post 32nm CMOS era

ECS Transactions

Volumn 19, Issue 1, 2009, Pages 3-14

  Nishi, Yoshio ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; DEVICE PERFORMANCE; HIGH MOBILITY MATERIALS; HIGH- K; METAL-GATE; NANOELECTRONIC DEVICES; PERFORMANCE ENHANCEMENTS; TECHNOLOGY NODES;

CMOS INTEGRATED CIRCUITS;

EID: 74949121953     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3118926     Document Type: Conference Paper

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