Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors

Chemistry of Materials

Volumn 21, Issue 22, 2009, Pages 5443-5455

  Milanov, Andrian P ^a   Toader, Teodor ^a   Parala, Harish ^a   Barreca, Davide ^b   Gasparotto, Alberto ^b   Bock, Claudia ^a   Becker, Hans Werner ^a   Ngwashi, Divine K ^c   Cross, Richard ^c   Paul, Shashi ^c   Kunze, Ulrich ^b   Fischer, Roland A ^a   Devi, Anjana ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF PADOVA   (Italy)

^c DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CRYSTALLINITIES; DEPOSITION TEMPERATURES; ELECTRICAL PROPERTY; FILM PROPERTIES; GASPHASE; GROWTH CHARACTERISTIC; GUANIDINATES; ISOSTRUCTURAL; LANTHANIDE OXIDE; MASS TRANSPORT; METAL-ORGANIC COMPLEXES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTI-TECHNIQUE APPROACH; REDUCED PRESSURE; SEM; SI(1 0 0); SUBSTRATE TEMPERATURE; TEMPERATURE RANGE; THERMAL GRAVIMETRIC ANALYSIS; THERMAL STABILITY; UNIFORM FILMS; XPS; XRD;

DEPOSITION; DYSPROSIUM; ELECTRIC PROPERTIES; FILM GROWTH; GADOLINIUM; GRAVIMETRIC ANALYSIS; OXIDE FILMS; OXYGEN; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; SURFACE STRUCTURE; THERMODYNAMIC STABILITY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 72149133670     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm902123m     Document Type: Article

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