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Journal of Materials Science: Materials in Electronics

Volumn 22, Issue 12, 2011, Pages 1810-1815

Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications

(7) Luka, G a Krajewski, T A a Witkowski, B S a Wisz, G b Virt, I S b,c Guziewicz, E a Godlewski, M a,d

a INSTITUTE OF PHYSICS (Poland)

b UNIVERSITY OF RZESZÓW (Poland)

c DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY (Ukraine)

d CARDINAL STEFAN WYSZY SKI UNIVERSITY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; DEPOSITION; LIGHT TRANSMISSION; OPTICAL FILMS; TEMPERATURE MEASUREMENT; ZINC; ZINC OXIDE;

AL CONTENT; ALUMINUM DOPED ZINC OXIDE FILMS; CARRIER SCATTERING; FILM RESISTIVITY; GROWTH MODES; OPTICAL AND ELECTRICAL PROPERTIES; TRANSPARENT ELECTRODE; ZNO:AL FILMS;

OXIDE FILMS;

EID: 85027957530 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-011-0367-0 Document Type: Article

Times cited : (109)

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