Vertically stacked non-volatile memory devices - material considerations

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2434-2438

  Godlewski, M ^a,b   Guziewicz, E ^a   Szade, J ^c   Wojcik Glodowska A ^a   Wachnicki, L ^a,b   Krajewski, T ^a   Kopalko, K ^a   Jakiela R ^a   Yatsunenko, S ^a   Przezdziecka E ^a   Kruszewski, P ^a   Huby, N ^d   Tallarida, G ^d   Ferrari, S ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c UNIVERSITY OF SILESIA   (Poland)

^d LABORATORIO MDM   (Italy)

Author keywords

Atomic layer deposition; Cross bar memories; Electrical properties; Zinc oxide

Indexed keywords

ATOMIC PHYSICS; ATOMS; DATA STORAGE EQUIPMENT; ELECTRIC PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTOR JUNCTIONS; ZINC; ZINC OXIDE;

ATOMIC LAYERS; CROSS-BAR MEMORIES; ELECTRICAL PROPERTIES; LOW TEMPERATURES; NEW GENERATIONS; P-N JUNCTIONS; SCHOTTKY; VOLATILE MEMORIES; ZNO FILMS;

ATOMIC LAYER DEPOSITION;

EID: 56649100564     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.012     Document Type: Article

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