Properties and characterization of ALD grown dielectric oxides for MIS structures

Acta Physica Polonica A

Volumn 119, Issue 5, 2011, Pages 692-695

  Gieraltowska S ^a   Sztenkiel, D ^a   Guziewicz, E ^a   Godlewski, M ^a,b   Luka G ^a   Witkowski, B S ^a   Wachnicki, L ^a   Lusakowska E ^a   Dietl, T ^a,c   Sawicki, M ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; MIS DEVICES;

AMORPHOUS STRUCTURES; DIELECTRIC OXIDES; DILUTED FERROMAGNETIC SEMICONDUCTORS; ELECTRICAL CHARACTERIZATION; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MICROMAGNETIC PROPERTIES; SHEET CARRIER DENSITIES; STATE OF THE ART;

ATOMIC LAYER DEPOSITION;

EID: 79954482180     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.119.692     Document Type: Conference Paper

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